Chemin:OKDatasheet > Fiche de Semi-conducteurs > Cree Datasheet > W4NRD8C-U000

W4NRD8C-U000 spec: Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRD8C-U000 similaires

  • W4NRD8C-U000
    • Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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W4NRD8C-U000 Datasheet et spécifications

Fabricant : Cree 

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Application : Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

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