Chemin:OKDatasheet > Fiche de Semi-conducteurs > Cree Datasheet > W4NRE0X-0D00

W4NRE0X-0D00 spec: Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRE0X-0D00 similaires

  • W4NRD8C-U000
    • Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4NRE0X-0D00
    • Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRE0X-0D00 Datasheet et spécifications

Fabricant : Cree 

Emballage :  

Pins : 0 

Température : Min 0 °C | Max 0 °C

Taille : 306 KB

Application : Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W4NRE0X-0D00 PDF Download