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PBC 300UR5A IRF520VS IRF9640 SD300R28MC IR6210 IRFBA90N20D IRU1205-28CL SD600R28PTC 305UA160 IRFPG30 IR2128S IR6216 309UR200 SD403C12S10C SD200N16PBV 301U250P3 ST230C08C0 IRL620S SD403C10S15C ST2600C30R1L ST103S04PFN2L IR2118S ST330C04C3 SD203R08S10PBC IRF2807 IRC644 SD153R10S10P

IR Fiches catalogue-109

Partie nFabricantApplication
IRGPH50F IRInsulated gate bipolar transistor
SD103R04S15PBC IRFast recovery diode
300UR5A IRStandard recovery diode
IRF520VS IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
IRF9640 IRHEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -11A
SD300R28MC IRStandard recovery diode
IR6210 IRIntelligent high side mosfet power switch
IRFBA90N20D IRHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.023 Ohm, ID = 98A
IRU1205-28CL IR300mA ultra low dropout positive fixed 2.8V regulator
SD600R28PTC IRStandard recovery diode
305UA160 IRStandard recovery diode
IRFPG30 IRHEXFET power MOSFET. VDSS = 1000 V, RDS(on) = 5.0 Ohm, ID = 3.1 A
IR2128S IRCurrent sensing single channel driver
IR6216 IRIntelligent high side mosfet power switch
309UR200 IRStandard recovery diode
SD403C12S10C IRFast recovery diode
SD200N16PBV IRStandard recovery diode
301U250P3 IRStandard recovery diode
ST230C08C0 IRPhase control thyristor
IRL620S IRHEXFET power mosfet
SD403C10S15C IRFast recovery diode
ST2600C30R1L IRPhase control thyristor
ST103S04PFN2L IRInverter grade thyristor
IR2118S IRSingle channel driver
ST330C04C3 IRPhase control thyristor
SD203R08S10PBC IRFast recovery diode
IRF2807 IRPower MOSFET, 75V, 82A
IRC644 IRHEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
SD153R10S10PV IRFast recovery diode
45LR160D IRStandard recovery diode

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