Chemin:okDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IR-131

ST180S04M2L SD103N20S10PC ST380CH06C2L 303UA160P5 200HFR80MV IRG4BC20W 301UR120P5 305UR200P2 ST333S08MFM1L ST300C20L2L SD603C20S20C IRLU120N SD103R25S20MSC ST230S04M0 ST1200C20K2L SD203R16S20MV SD203N12S15MC IRG4BC30 ST333S04MFM3 SD300N12PBC ST180S20M0 SD150R25PC ST330C04L1L ST30

IR Fiches catalogue-131

Partie nFabricantApplication
IRF7604 IRHEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.09 Ohm.
SD150N14PSC IRStandard recovery diode
ST180S04M2L IRPhase control thyristor
SD103N20S10PC IRFast recovery diode
ST380CH06C2L IRPhase control thyristor
303UA160P5 IRStandard recovery diode
200HFR80MV IRStandard recovery diode
IRG4BC20W IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
301UR120P5 IRStandard recovery diode
305UR200P2 IRStandard recovery diode
ST333S08MFM1L IRInverter grade thyristor
ST300C20L2L IRPhase control thyristor
SD603C20S20C IRFast recovery diode
IRLU120N IRN-channel power MOSFET, 100V, 10A
SD103R25S20MSC IRFast recovery diode
ST230S04M0 IRPhase control thyristor
ST1200C20K2L IRPhase control thyristor
SD203R16S20MV IRFast recovery diode
SD203N12S15MC IRFast recovery diode
IRG4BC30 IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
ST333S04MFM3 IRInverter grade thyristor
SD300N12PBC IRStandard recovery diode
ST180S20M0 IRPhase control thyristor
SD150R25PC IRStandard recovery diode
ST330C04L1L IRPhase control thyristor
ST303C10LHK3 IRInverter grade thyristor
IRF9640STRR IRP-channel MOSFET for fast switching applications, 200V, 11A
SD203N10S10MBC IRFast recovery diode
ST303C04HK0L IRInverter grade thyristor
IRFS38N20D IRHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.054 Ohm, ID = 44A

<< 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 >>