Chemin:okDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IR-143

R2L ST223C08CHK0L CPU165MF ST280S04P1VL IRFZ44Z SD150OC30L 305UR250P2 SD150R20PBC SD500N30PTC SD400N08PSC 300HF40MS 301URA200P2 ST230S16M1 SD103R04S20MC 301U120P5 JANTX2N6786 ST230C14C2L JANTXV2N6804 SD153R12S15PSV ST300C20L0 IRF820 301U80P4 IRG4PC30 302UFR120PD IRHN9150 IRKH4301

IR Fiches catalogue-143

Partie nFabricantApplication
303UA120P5 IRStandard recovery diode
ST3230C12R2L IRPhase control thyristor
ST223C08CHK0L IRInverter grade thyristor
CPU165MF IRIGBT SIP module
ST280S04P1VL IRPhase control thyristor
IRFZ44Z IRN-channel power MOSFET for fast switching applications, 55V, 51A
SD150OC30L IRStandard recovery diode
305UR250P2 IRStandard recovery diode
SD150R20PBC IRStandard recovery diode
SD500N30PTC IRStandard recovery diode
SD400N08PSC IRStandard recovery diode
300HF40MS IRStandard recovery diode
301URA200P2 IRStandard recovery diode
ST230S16M1 IRPhase control thyristor
SD103R04S20MC IRFast recovery diode
301U120P5 IRStandard recovery diode
JANTX2N6786 IRHEXFET power mosfet
ST230C14C2L IRPhase control thyristor
JANTXV2N6804 IRHEXFET power mosfet
SD153R12S15PSV IRFast recovery diode
ST300C20L0 IRPhase control thyristor
IRF820 IRHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
301U80P4 IRStandard recovery diode
IRG4PC30 IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
302UFR120PD IRStandard recovery diode
IRHN9150 IRHEXFET transistor
IRKH43018 IRThyristor/diode and thyristor/thyristor
305UR120P5 IRStandard recovery diode
IRFU5505 IRHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.11 Ohm, ID = -18A
307UR120P2 IRStandard recovery diode

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