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53N10S10MV IRF1607 SD103N14S20PBC 301UR80P5 SD300R32MBC IRC640 SD103R10S20MC SD153R16S15MV ST2100C30R3L SD253N16S20PV ST180S12M0V ST700C16L0 300UF160APD ST103S04PFN2 IRC630 SD103R10S15MBC SD300R28MSC 200HF80MSV ST173C12HK0L ST733C08LHK0L SD253R16S15MBV SD203N20S15MBC 309U120P5 SD

IR Fiches catalogue-3

Partie nFabricantApplication
IRF7807 IRHEXFET chip-set for DC-DC converters. VDSS = 30V. RDS(on) = 25mOhm.
IRFI3205 IR"HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A"
SD153N10S10MV IRFast recovery diode
IRF1607 IR"HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0075 Ohm, ID = 142A."
SD103N14S20PBC IRFast recovery diode
301UR80P5 IRStandard recovery diode
SD300R32MBC IRStandard recovery diode
IRC640 IR"HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm"
SD103R10S20MC IRFast recovery diode
SD153R16S15MV IRFast recovery diode
ST2100C30R3L IRPhase control thyristor
SD253N16S20PV IRFast recovery diode
ST180S12M0V IRPhase control thyristor
ST700C16L0 IRPhase control thyristor
300UF160APD IRStandard recovery diode
ST103S04PFN2 IRPhase control thyristor
IRC630 IR"HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
SD103R10S15MBC IRFast recovery diode
SD300R28MSC IRStandard recovery diode
200HF80MSV IRStandard recovery diode
ST173C12HK0L IRInverter grade thyristor
ST733C08LHK0L IRInverter grade thyristor
SD253R16S15MBV IRFast recovery diode
SD203N20S15MBC IRFast recovery diode
309U120P5 IRStandard recovery diode
SD103N20S10MBC IRFast recovery diode
303U120P4 IRStandard recovery diode
SD303C20S10C IRFast recovery diode
ST330S04M1L IRPhase control thyristor
SD453R16S20MSC IRFast recovery diode

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