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2 IRF7755 IRF7555 ST1200C18K1L 302UFR160AYPD IRGPC50UD2 IRFP448 IRFU320 SD103N10S15PC SD153N04S15PV IRF9Z24NL 112RKI120 SD253R08S20PBV IRFBC20L IRF640L ST2600C20R1L IRF3703 IRF140 IRFIBE20G SD400N16PSV SD203N04S20PC SD103R14S10PBC ST180C12C2 ST330C04L0L ST1900C48R2 IRFZ44V ST203S

IR Fiches catalogue-82

Partie nFabricantApplication
ST730C12L1 IRPhase control thyristor
IRGBC30MD2 IRInsulated gate bipolar transistor with ultrafast soft reconery diode
IRF7755 IRHEXFET power MOSFET. VDSS = -20V. RDS(on) = 51mOhm, ID = -3.7A @ VGS = -4.5V. RDS(on) = 86mOhm, ID = -2.8A @ VGS = -2.5V.
IRF7555 IRHEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.055 Ohm.
ST1200C18K1L IRPhase control thyristor
302UFR160AYPD IRStandard recovery diode
IRGPC50UD2 IRInsulated gate bipolar transistor with ultrafast soft recovery diode
IRFP448 IRHEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.60 Ohm, ID = 11 A
IRFU320 IRHEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A
SD103N10S15PC IRFast recovery diode
SD153N04S15PV IRFast recovery diode
IRF9Z24NL IRHEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A
112RKI120 IRPhase control thyristor
SD253R08S20PBV IRFast recovery diode
IRFBC20L IRHEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A
IRF640L IRN-channel power MOSFET for fast switching applications, 200V, 18A
ST2600C20R1L IRPhase control thyristor
IRF3703 IRHEXFET power MOSFET. VDSS = 30V, RDS(on) = 2.8 mOhm, ID = 210A
IRF140 IRRepetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.
IRFIBE20G IRHEXFET power MOSFET. VDSS = 800V, RDS(on) = 6.5 Ohm, ID = 1.4 A
SD400N16PSV IRStandard recovery diode
SD203N04S20PC IRFast recovery diode
SD103R14S10PBC IRFast recovery diode
ST180C12C2 IRPhase control thyristor
ST330C04L0L IRPhase control thyristor
ST1900C48R2 IRPhase control thyristor
IRFZ44V IRPower MOSFET, 60V, 55A
ST203S12PFJ2L IRInverter grade thyristor
SD823C20S20C IRFast recovery diode
ST1200C16K1 IRPhase control thyristor

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