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Partie nApplication
1N5817 Schottky barrier rectifier. Max recurrent peak reverse voltage 20V. Max RMS voltage 14V. Max DC blocking voltage 20V. Current 1.0A
2SC2921 NPN planar silicon transistor. Audio power amplifier, DC to DC converter
1N5397 Silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. MAX DC blocking voltage 600V. Current 1.5A
BU407 Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.
2SD235 NPN epitaxial silicon transistor. Low frequency power amplifier.
FR103 Fast recovery rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V.
MJ15002 PNP planar silicon transistor. Audio power amplifier DC to DC converter
2SB435 PNP epitaxial silicon transistor. Low frequency power amplifier.
KBPC1506 Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
LM2931CT-5.0 Low dropout regulator. Vout = 5V.
2SD1432 NPN tripple diffused planar silicin transistor. Color TV horizontal output applications(no damper diode)
MJ15004 PNP planar silicon transistor. Audio power amplifier DC to DC converter
NE555M Precision timer
2SD1876 NPN triple diffused planar silicon transistor. Color TV horizontal output applications(damper diode built in)
1N5395 Silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max DC blocking voltage 400V. Current 1.5A
1N5402 Silicon rectifier. Max recurrent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V. Current 3.0A
WS62256LLP Very low power/volpage CMOS SRAM. 32K x 8 bit. Vcc 4.4V-5.5V. Speed 70ns
2SC1050 Silicon epitaxial planar transistor. NPN high frequency, high power, primarily for use in audio and general purpose
2SC1827 NPN epitaxial silicon transistor. Low frequency power amplifier.
MJ11017 PNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers
S8050LT1 Transistor(PNP). Power dissipation 0.3W, Collector current 0.5A. Collector-base voltage 40V
KBPC3506 Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 600V. Maximum RMS bridge input voltage 420V. Maximum DC blocking voltage 600V
SMA5817 Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 20V. Max RMS bridge input voltage 14V. Max DC blocking voltage 20V.
LM385Z-2.5 Micropower voltage reference diode. Low voltage reference 2.5V
MJ10009 NPN silicon transistor. Switching regulators. PWM inverters. Solenoid and relay drivers.
2SD401 Silicon epitaxial planar transistor.
WS2418 Telephone tone ringer with bridge diode
TIP41C NPN silicon power transistor. Medium power linear and switching applications Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V

WingShing Profil

Wing Shing Electronic designs and manufactures a broad range of standard and application-specific components: Discrete Components Diodes Thyristors Transistors Integrated Circuits Analog and Mixed-Signal Circuit Peripheral Interface Storage

Wing Shing International GroupFiches catalogue

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