Chemin:okDatasheet > Fiche de Semi-conducteurs > WingShing Datasheet > WingShing-4

75 SMA5818 2SB688 1N5400 2SD718 SMA4006 2SA986A 2SB507 2SD717 2SD389 2SA985 2SB827 2SB945 DB4 FR105 TIP3055 KBPC3501 BUT11 HC-49/S 2SD1148 WMBT3904 2SD1128 78L12ACZ MJ11015 2SA1301 2SC3854 78L18ACZ SMA4001

WingShing Fiches catalogue-4

Partie nFabricantApplication
2SD1910 WingShingSilicon diffused power transistor.
2SD869 WingShingSilicon diffused power transistor.
2SD1175 WingShingNPN tripple diffused planar silicon transistor. Color TV horizontal output applications(damper diode BUILTIN)
SMA5818 WingShingSurface mount schottky barrier rectifier. Max reccurent peak reverse voltage 30V. Max RMS bridge input voltage 21V. Max DC blocking voltage 30V.
2SB688 WingShingPNP planar silicon transistor. Audio power amplifier DC to DC converter.
1N5400 WingShingSilicon rectifier. Max recurrent peak reverse voltage 50V. Max RMS voltage 35V. Max DC blocking voltage 50V. Current 3.0A
2SD718 WingShingNPN planar silicon transistor. Audio power amplifier DC to DC converter
SMA4006 WingShingSurface mount silicon rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V.
2SA986A WingShingPNP epitaxial silicon transistor. Low erequency power amplifier.
2SB507 WingShingPNP epitaxial silicon transistor. Low frequency power amplifier.
2SD717 WingShingSilicon epitaxial planar transistor.
2SD389 WingShingNPN epitaxial silicon transistor. Low frequency power amplifier
2SA985 WingShingPNP epitaxial silicon transistor. Low erequency power amplifier.
2SB827 WingShingPNP planar silicon transistor. PSW/D/DDC
2SB945 WingShingPNP epitaxial silicon transistor. Power amplifier vertical deflection output.
DB4 WingShingBi-directional trigger diode. Breakdown voltage (typ) 40V. Breakdown voltage symmetry (max) 3V. Dynamic breakback voltage (min) 5V.
FR105 WingShingFast recovery rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V.
TIP3055 WingShingNPN planar silicon transistor. Audio power amplifier. DC to DC converter. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 6V
KBPC3501 WingShingSingle-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 100V. Maximum RMS bridge input voltage 70V. Maximum DC blocking voltage 100V
BUT11 WingShingNPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
HC-49/S WingShingCrystal unit. Nominal frequency 3.579545-27.00MHz
2SD1148 WingShingNPN planar silicon transistor. Audio power amplifier, DC to DC converter
WMBT3904 WingShingNPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
2SD1128 WingShingNPN silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers
78L12ACZ WingShingPositive-voltage regulator. Output current up to 100mA
MJ11015 WingShingPNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers
2SA1301 WingShingPNP planar silicon transistor. Audio power amplifier DC to DC converter.
2SC3854 WingShingNPN planar silicon transistor. Audio power amplifier DC to DC converter
78L18ACZ WingShingPositive-voltage regulator. Output current up to 100mA
SMA4001 WingShingSurface mount silicon rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V.

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