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BSI Fiche technique Recherche, Dernières fiches BSI


Pour trouver les Brilliance SemiconductorFiche d'information, de recherche okDatasheet par le numéro de pièce ou élément de description. Vous seront présentés avec une liste de toutes les parties correspondant aux fiches BSI. Cliquez sur une liste de composants électroniques pour voir plus de détails y compris les spécifications.
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Nouvelles BSI Fiche au format PDF

Partie nApplication
BS62UV4000PI 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 512K x 8bit
BS62UV4000STC 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 512K x 8bit
BS616UV4020BC 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable
BS62LV1023TI 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit
BS62LV1023JC 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit
BS616LV2011TI 70/100ns 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit
BS62LV8005EC 55/70ns 45mA 4.5-5.5V very low power/voltage CMOS SRAM 1M x 8bit
BS62LV2001TC-10 Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns
BS62LV2563PI 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 32K x 8bit
BS616LV4025DC 70/55ns 45mA 4.5-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable
BS62LV256PC 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit
BS616LV8012BC 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 512K x 16bit
BS616LV2021DI 70/100ns 20-40mA 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable
BS616LV2011TC 70/100ns 2.4-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit
BS616LV4021BI 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable
BS616LV4010BC 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit
BS62LV4005PC 55/70ns 45mA 4.5-5.5V low power/voltage CMOS SRAM 512K x 8bit
BS62LV1024JI 70ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 128K x 8bit
BS616UV2011TI 70/100ns 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit switchable
BS62UV1024TC 150ns 10-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 128K x 8bit
BS616LV2015TI 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit
BS616LV4015DI 70/100ns 45mA 4.5-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit
BS62LV2001DC-70 Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns
BS62LV2001SC-70 Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns
BS616UV4010DI 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit
BS62LV2003TI 70/100ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 256K x 8bit
BS616LV4010BI 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit
BS62LV2005SI 55/70ns 35mA 4.5-5.5V very low power/voltage CMOS SRAM 256K x 8bit

BSI Profil

BSI, founded in 1996, is a fabless semiconductor manufacturing company and a global supplier of ultra low power SRAM. BSI is headquartered in Taiwan's Silicon Valley, the Science-Based Industrial Park in Hsinchu. BSI provides worldwide ultra low power SRAM solution that covers low density 256K SRAM through 16M SRAM as well as an aggressive roadmap strategy to develop product beyond this. BSI ultra low power SRAM has been used extensively in industry that covers cellular phone, PDA, GPS, handy game, bar code reader, battery-backup electronics, etc. BSI is a major player in the worldwide ultra low power SRAM market.

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