| Partie n | Fabricant | Application |
|---|
| IRLI630G | IR | HEXFET power mosfet |
| IRG4RC10U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A |
| 302UR100A | IR | Standard recovery diode |
| IRFZ44ZS | IR | N-channel power MOSFET for fast switching applications, 55V, 51A |
| ST180S20P0L | IR | Phase control thyristor |
| 181RKI40 | IR | Phase control thyristor |
| 200HFR80PSV | IR | Standard recovery diode |
| 70UR60 | IR | Standard recovery diode |
| SD600N20PSC | IR | Standard recovery diode |
| ST230S12M1VL | IR | Phase control thyristor |
| 303U200P3 | IR | Standard recovery diode |
| IRG4BC40W | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A |
| SD253R08S15PSV | IR | Fast recovery diode |
| IRKT50008 | IR | Thyristor/diode and thyristor/thyristor |
| ST110S16P0L | IR | Phase control thyristor |
| ST303C08LHK0 | IR | Inverter grade thyristor |
| 305UR80P4 | IR | Standard recovery diode |
| ST303C08CHK3L | IR | Inverter grade thyristor |
| SD103N04S10PBC | IR | Fast recovery diode |
| IRF5305S | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A |
| ST230S08P1L | IR | Phase control thyristor |
| 70UFR120YPD | IR | Standard recovery diode |
| SD203N16S15MV | IR | Fast recovery diode |
| IRF3415S | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43A |
| ST303S10PFN3 | IR | Inverter grade thyristor |
| ST330C16L2 | IR | Phase control thyristor |
| IR51HD310 | IR | Self-oscillating half-bridge |
| ST300C18L1 | IR | Phase control thyristor |
| SD600R08PTC | IR | Standard recovery diode |
| SD453R16S30PTC | IR | Fast recovery diode |
