| Partie n | Fabricant | Application |
|---|
| FR207 | JGD | 2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
| W06MG | JGD | Miniature single phase glass passivated bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.5 A. |
| S3K | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 3.0 A. |
| MUR110 | JGD | 1.0A ultra fast rectifier. Max recurrent peak reverse voltage 100V. |
| 1N5391 | JGD | 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
| SMAJ7.5CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.5 V. Bidirectional. |
| 1N5955C | JGD | 1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-2% tolerance. |
| BZX84C27 | JGD | 350mW zener diode, 27V |
| SR304 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 3.0 A. |
| 1N988D | JGD | 0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-1% tolerance. |
| SMAJ16CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V. Bidirectional. |
| ZMM5232B | JGD | Surface mount zener diode. Nominal zener voltage 5.6 V. Test current 20 mA. +-5% tolerance. |
| KBP201 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
| 1N981A | JGD | 0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. +-10% tolerance. |
| KBPC806 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. |
| 1N4623D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 4.3V. 1% tolerance. |
| 1N5954D | JGD | 1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. |
| 1N5931 | JGD | 1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-20% tolerance. |
| HER508 | JGD | 5.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N4099C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 6.8V. 2% tolerance. |
| DF02S | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200 V. |
| SMAJ70A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 70 V. |
| 1N4002L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 100V. |
| 1N5534A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| HER202G | JGD | 2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| SMBJ5931B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 18 V. Test current 20.8 mA. +-5% tolerance. |
| ZMM5226A | JGD | Surface mount zener diode. Nominal zener voltage 3.3 V. Test current 20 mA. +-3% tolerance. |
| SMAJ18CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V. Bidirectional. |
| BY127 | JGD | 0.5 A silicon rectifier. Max recurrent peak reverse voltage 1250 V. |
| 1W01G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100 V. |
