Chemin:okDatasheet > Fiche de Semi-conducteurs > JGD Datasheet > JGD-30
M5233A 3EZ13D5 1N4624D 1N4119D ZMM55-A33 1N5520D ES1G FR604G SMAJ150A ZMM55-B11 ZMM55-B43 3EZ12D2 3EZ130D2 KBPC301 1N989C P6KE91 SMAJ170CA 1N5956B SMBJ5934 ZMM55-D39 MUR415 SFA15 P6KE82A 1N4121C SMBJ78CA BY550-800 SMBJ10C 1N4109D
Partie n | Fabricant | Application |
---|---|---|
SMBJ5945B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 68 V. Test current 5.5 mA. +-5% tolerance. |
SMAJ11A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V. |
ZMM5233A | JGD | Surface mount zener diode. Nominal zener voltage 6.0 V. Test current 20 mA. +-3% tolerance. |
3EZ13D5 | JGD | 3 W, silicon zener diode. Nominal voltage 13 V, current 58 mA, +-5% tolerance. |
1N4624D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 4.7V. 1% tolerance. |
1N4119D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 28V. 1% tolerance. |
ZMM55-A33 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 31-35 V. Test current 5 mA. +-1% tolerance. |
1N5520D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-1% tolerance. |
ES1G | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 400 V. |
FR604G | JGD | 6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
SMAJ150A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V. |
ZMM55-B11 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 10.4-11.6 V. Test current 5 mA. +-2% tolerance. |
ZMM55-B43 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 40-46 V. Test current 2.5 mA. +-2% tolerance. |
3EZ12D2 | JGD | 3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-2% tolerance. |
3EZ130D2 | JGD | 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-2% tolerance. |
KBPC301 | JGD | Single phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
1N989C | JGD | 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-2% tolerance. |
P6KE91 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V. |
SMAJ170CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 170 V. Bidirectional. |
1N5956B | JGD | 1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-5% tolerance. |
SMBJ5934 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 24 V. Test current 15.6 mA. +-20% tolerance. |
ZMM55-D39 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 37-41 V. Test current 2.5 mA. +-20% tolerance. |
MUR415 | JGD | 4.0A ultra fast rectifier. Max recurrent peak reverse voltage 150V. |
SFA15 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A. |
P6KE82A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V. |
1N4121C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 33V. 2% tolerance. |
SMBJ78CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 86.7 V (min), 65.8 V (max). Test current 1.0 mA. Bidirectional. |
BY550-800 | JGD | 5.0 A silicon rectifier. Max recurrent peak reverse voltage 800 V. |
SMBJ10C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 11.1 V (min), 13.6 V (max). Test current 1.0 mA. Bidirectional. |
1N4109D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 15V. 1% tolerance. |