| Partie n | Fabricant | Application |
|---|
| W005MG | JGD | Miniature single phase glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.5 A. |
| KBU810G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| SR104 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 1.0 A. |
| 3EZ43D3 | JGD | 3 W, silicon zener diode. Nominal voltage 43 V, current 17 mA, +-3% tolerance. |
| 1N957A | JGD | 0.5W, silicon zener diode. Zener voltage 6.8V. Test current 18.5mA. +-10% tolerance. |
| SS100 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A. |
| 1N4752C | JGD | 1W zener diode. Nominal zener voltage 33V. 2% tolerance. |
| 1N5940B | JGD | 1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-5% tolerance. |
| SMAJ13C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V. Bidirectional. |
| 1N958C | JGD | 0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-2% tolerance. |
| KBU808 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
| 1N5536 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-20% tolerance. |
| SMBJ7.5A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 8.33 V (min), 9.21 V (max). Test current 1.0 mA. |
| 1EZ120D5 | JGD | 1 watt silicon zener diode. Nominal zener voltage 120V at 2.0mA. |
| SMBJ5944 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-20% tolerance. |
| SMAJ14 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. |
| HER105G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| SMAJ120C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 120 V. Bidirectional. |
| SMBJ5929D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 15 V. Test current 25.0 mA. +-1% tolerance. |
| S2M | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.5 A. |
| 1N5929D | JGD | 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-1% tolerance. |
| SMAJ28C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 28 V. Bidirectional. |
| 3EZ17D5 | JGD | 3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-5% tolerance. |
| SMBJ5941B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 47 V. Test current 8.0 mA. +-5% tolerance. |
| 1N4617 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 2.4V. |
| FS1M | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N4742C | JGD | 1W zener diode. Nominal zener voltage 12V. 2% tolerance. |
| P6KE250C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional. |
| SF33G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 3.0 A. |
| ZMM5234D | JGD | Surface mount zener diode. Nominal zener voltage 6.2 V. Test current 20 mA. +-20% tolerance. |
