| Partie n | Fabricant | Application |
|---|
| MAX40-43.0CA | MDE Semiconductor | 43.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ130A | MDE Semiconductor | 130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA8.0 | MDE Semiconductor | 8.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ60 | MDE Semiconductor | 60.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE30A | MDE Semiconductor | 25.60V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE100 | MDE Semiconductor | 81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-20D781K | MDE Semiconductor | 780V; max peak current75000A; metal oxide varistor. Standard D series 20mm disc |
| 5KP75A | MDE Semiconductor | 75.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| LCE9.0A | MDE Semiconductor | 9.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| P6KE220A | MDE Semiconductor | 185.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP45 | MDE Semiconductor | 45.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE13 | MDE Semiconductor | 10.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMLJ26 | MDE Semiconductor | 26.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-17.0CA | MDE Semiconductor | 17.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-48.0C | MDE Semiconductor | 48.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMLJ100A | MDE Semiconductor | 100.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE170A | MDE Semiconductor | 145.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMDJ54A | MDE Semiconductor | 54.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE250A | MDE Semiconductor | 214.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-54.0CA | MDE Semiconductor | 54.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP20A | MDE Semiconductor | 20.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SAC15 | MDE Semiconductor | 15.00V; 20.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
| 1.5KE82 | MDE Semiconductor | 66.40V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMDJ36 | MDE Semiconductor | 36.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-5D270K | MDE Semiconductor | 27V; max peak current250A; metal oxide varistor. Standard D series 5mm disc |
| 15KP58A | MDE Semiconductor | 58.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMLJ110 | MDE Semiconductor | 110.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA33A | MDE Semiconductor | 33.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| LCE13 | MDE Semiconductor | 13.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| MAX-470 | MDE Semiconductor | 423V; 20A ;648KW peak pulse power; high current transient voltage suppressor |
