Magnatec Fiches catalogue-1
| Partie n | Fabricant | Application |
|---|---|---|
| BUZ903P | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
| MAG90X95 | Magnatec | "Complimentary pair dual chanel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage +,-160V." |
| BUL52A | Magnatec | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BUZ906D | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ902D | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
| BCU83 | Magnatec | NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications requiring efficient low loss devices. |
| BUZ908 | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
| BUL54B | Magnatec | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BUZ902 | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
| BUZ901X4S | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. |
| BUZ902 | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
| T65 | Magnatec | NPN silicon darlington power transistor. Complementary epitaxial base transistors in monolithic darlington circuit for audio output stages and general amplifier and switching applications. |
| BUZ900X4S | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. |
| MAG91X96 | Magnatec | Complimentary pair dual chanel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage +,-200V. |
| BUZ901P | Magnatec | N-channel power MOSFET for audio applications, 200V |
| BCU86 | Magnatec | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| BUZ907 | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
| BUL52B | Magnatec | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BCU87 | Magnatec | PNP epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| BUZ905 | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
| BUL74A | Magnatec | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BUZ900 | Magnatec | N-channel power MOSFET for audio applications, 160V |
| BUZ906 | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ902DP | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
| BUZ908DP | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
| BUZ903DP | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
| BUZ905X4S | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
| SMX37 | Magnatec | Silicon NPN epitaxial planar power transistor. |
| BCU86D | Magnatec | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| T64 | Magnatec | PNP silicon darlington power transistor. Complementary epitaxial base transistors in monolithic darlington circuit for audio output stages and general amplifier and switching applications. |
1 2