| Partie n | Fabricant | Application |
|---|
| NTE5517 | NTE Electronic | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 35A. |
| NTE5177A | NTE Electronic | Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 5.1V. Zener test current Izt = 490mA. |
| NTE588 | NTE Electronic | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A. |
| NTE170 | NTE Electronic | Single phase bridge rectifier, 2.0 Amp. Max recurrent peak reverse voltage 1000 V. Max average forward output current 2 A. |
| NTE264 | NTE Electronic | Silicon complementary PNP transistor. Darlington power amplifier. |
| NTE6068 | NTE Electronic | Industrial silicon recfifier. Cathode to case. Max peak reverse voltage 800V. Max forward current 70A. |
| NTE366 | NTE Electronic | Silicon NPN transistor. RF power output, Po = 25W @ 512MHz. |
| NTE1199 | NTE Electronic | Integrated circuit. CMOS frequency divider. |
| NTE290 | NTE Electronic | Silicon complementary PNP transistor. Audio power amplifier, switch. |
| NTE1441 | NTE Electronic | Integrated circuit. FM IF amplifier, detector. |
| NTE266 | NTE Electronic | Silicon NPN transistor. Darlington power amplifier. |
| NTE2086 | NTE Electronic | Integrated circuit. 4-stage darlington array. |
| NTE1784 | NTE Electronic | Integrated circuit. TV horizontal processor. |
| NTE326 | NTE Electronic | Silicon P-channel JFET transistor. General purpose AF amplifier. |
| NTE3047 | NTE Electronic | Optoisolator. TRIAC driver output |
| NTE8182 | NTE Electronic | Thermal cut-off (thermal fuse). |
| NTE998 | NTE Electronic | Integrated circuit. 1.22V reference diode. |
| NTE5943 | NTE Electronic | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 15A. |
| NTE3302 | NTE Electronic | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. |
| NTE5011T1 | NTE Electronic | Zener diode, 500watt, +-1 % tolerance. Nominal zener voltage Vz = 5.6V, Zener test current Izt = 5mA. |
| NTE6112 | NTE Electronic | Industrial rectifier. Repetitive voltae 1200V. Average forward current 500A. |
| NTE5884 | NTE Electronic | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 600V. Max forward current 30A. |
| NTE5440 | NTE Electronic | Silicon controlled rectifier (SCR). Isolated tab. Repetitive peak voltage Vrrm = 800V. RMS on-state current It = 9A. |
| NTE273 | NTE Electronic | Silicon darlington complementary PNP power aplifier. |
| NTE6403 | NTE Electronic | Integrated circuit. Silicon bilateral switch (SBS). |
| NTE350 | NTE Electronic | Silicon NPN transistor. RF power amp, driver. |
| NTE56 | NTE Electronic | Silicon NPN transistor. High gain switch and pass regulator. |
| NTE6020 | NTE Electronic | Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 50V. Max average forward current 60A. |
| NTE919D | NTE Electronic | Integrated circuit. High speed dual comparator. |
| NTE1690 | NTE Electronic | Integrated circuit. Telephone DTMF dialer. |
