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KP58A 3.0SMCJ75A SA51C P6SMBJ64C KBU6J UF1008 1.5SMCJ51A 1N5385B P6SMBJ12A BZT52-C15 1N4448WS P4SMAJ160C ER502 CP2504 CM2500 S2M P4KE91C SA6.5 SB850DC GBP302 GBP208 1.5SMCJ14A 15KP18C SA51CA P6SMBJ130 1SMB5950 BZX84C36W P6SMBJ24
Partie n | Fabricant | Application |
---|---|---|
SB2550FCT | PanJit | Isolation Schottky barrier rectifier. Max recurrent peak reverse voltage 50.0 V. Max average forward rectified current at Tc = 90degC 25 A. |
SD3100T | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 3 A. |
15KP58A | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 58 V. Vbr(min/max) = 64.4/74.1 V @ It = 5.0 mA. Ir = 10 uA. Vc = 93.6 V @ Ipp = 160 A. |
3.0SMCJ75A | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 75 V. Vbr(min/max) = 83.3/95.8 V @ It. Ir = 5 uA @ Vrwm. Vc = 121 V @ Ipp = 24.8 A. |
SA51C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 51.00V, Vbr(min/max) = 56.70/71.80V, It = 1 mA. |
P6SMBJ64C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 64 V. Vbr(min/max) = 71.1/90.1 V. It = 1.0 mA. Ir = 5 uA. Vc = 114 V. Ipp = 5.3 A. |
KBU6J | PanJit | Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 600 V. Max average forward rectified output current at Tc = 100degC 6.0 A, at Ta = 40degC 6.0 A. |
UF1008 | PanJit | Ultrafast switching rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 10.0 A. |
1.5SMCJ51A | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 51V; Vbr(min/max) = 56.7/65.2V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 82.4V, @ Ipp = 18.2A |
1N5385B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 170V, Izt = 8.0mA |
P6SMBJ12A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 12 V. Vbr(min/max) = 13.3/15.3 V. It = 1.0 mA. Ir = 5 uA. Vc = 19.9 V. Ipp = 30.2 A. |
BZT52-C15 | PanJit | Surface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 15 V @ Iz = 5 mA. |
1N4448WS | PanJit | Surface mount switching diode. Voltage 75V. Power 200mW. Peak reverse voltage 100V. |
P4SMAJ160C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 160 V. Breakdown voltage(min/max) 178/226.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 287 V. Peak pulse current 1.4 A. |
ER502 | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 200V. Max average forward current 5.0 A. |
CP2504 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward current for resistive load at Tc=55degC 25A. |
CM2500 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. |
S2M | PanJit | Surfase mount rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current at Tl = 110degC 2.0 A. |
P4KE91C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 73.70V, Vbr(min/max) = 81.90/100.00V, It = 1 mA. |
SA6.5 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 6.50V, Vbr(min/max) = 7.22/9.14V, It = 10 mA. |
SB850DC | PanJit | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Ta = 100degC 8 A. |
GBP302 | PanJit | In-line glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average rectified output current at 50degC ambient 3.0 A. |
GBP208 | PanJit | In-line glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 800V. Max average rectified output current 2.0A. |
1.5SMCJ14A | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 14V; Vbr(min/max) = 15.6/17.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 23.2V @ Ipp = 64.7A |
15KP18C | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 18 V. Vbr(min/max) = 20.0/25.3 V @ It = 50 mA. Ir = 5000 uA. Vc = 32.2 V @ Ipp = 439 A. |
SA51CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 51.00V, Vbr(min/max) = 56.70/65.20V, It = 1 mA. |
P6SMBJ130 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 231 V. Ipp = 2.6 A. |
1SMB5950 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 110 V. Test current Izt = 3.4 mA |
BZX84C36W | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 36 V |
P6SMBJ24 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 24 V. Vbr(min/max) = 26.7/33.8 V. It = 1.0 mA. Ir = 5 uA. Vc = 43.0 V. Ipp = 14.0 A. |