Chemin:okDatasheet > Fiche de Semi-conducteurs > Shanghai Sunrise Datasheet > Shanghai Sunrise-5
170A RS1J XR73-20U 1.5KE110 RS2B P6KE15A ES2D 1.5KE75C ES1G 5KP9.0CA RC10S10G US2DA P4KE62A D3SB20 5KP100CA P6KE130CA P6KE160C XR73-18R P4KE30C RC15S08G KBPC15005W RC30S08G 2CK48 XR72-3.3S XR73-11T 5KP7.0C ES2C P6KE350CA
Partie n | Fabricant | Application |
---|---|---|
P6KE62 | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 55.8 V, Vbr(max) = 68.2 V. Test current It = 1.0 mA. |
KBPC3504 | Shanghai Sunrise | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 35 A. |
P4KE170A | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
RS1J | Shanghai Sunrise | Surface mount fast switching rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 1.0 A. |
XR73-20U | Shanghai Sunrise | Planar zener diode. Zener voltage Vz = 19.72-20.72 V. Zener current Iz = 10 mA. Power dissipation Pt = 500 mW. |
1.5KE110 | Shanghai Sunrise | Transient voltage suppressor. 1500 W. Breakdown voltage 99.0 V(min), 121 V(max). Test current 1.0 mA. |
RS2B | Shanghai Sunrise | Surface mount fast switching rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 2.0 A. |
P6KE15A | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 14.3 V, Vbr(max) = 15.8 V. Test current It = 1.0 mA. |
ES2D | Shanghai Sunrise | Surface mount super fast switching rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 2.0 A. |
1.5KE75C | Shanghai Sunrise | Transient voltage suppressor. 1500 W. Breakdown voltage 67.5 V(min), 82.5 V(max). Test current 1.0 mA. |
ES1G | Shanghai Sunrise | Surface mount super fast switching rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 1.0 A. |
5KP9.0CA | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 10.0 V, Vbrmax = 11.1 V. Test current It = 5.0 mA. |
RC10S10G | Shanghai Sunrise | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 10 A. |
US2DA | Shanghai Sunrise | Surface mount ultra fast switching rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 2.0 A |
P4KE62A | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 58.9 V, Vbr(max) = 65.1 V. Test current It = 1.0 mA. |
D3SB20 | Shanghai Sunrise | Single phase glass passivated SIP bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 4.0 A. |
5KP100CA | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
P6KE130CA | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 124.0 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
P6KE160C | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 144 V, Vbr(max) = 176 V. Test current It = 1.0 mA. |
XR73-18R | Shanghai Sunrise | Planar zener diode. Zener voltage Vz = 16.22-17.06 V. Zener current Iz = 10 mA. Power dissipation Pt = 500 mW. |
P4KE30C | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 27.0 V, Vbr(max) = 33.0 V. Test current It = 1.0 mA. |
RC15S08G | Shanghai Sunrise | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 15 A. |
KBPC15005W | Shanghai Sunrise | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 15 A. |
RC30S08G | Shanghai Sunrise | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 30 A. |
2CK48 | Shanghai Sunrise | Silicon epitaxial planar switching diode. Reverse voltage 35 V. Average forward current 150 mA. |
XR72-3.3S | Shanghai Sunrise | Planar zener diode. Zener voltage Vz = 3.32-3.53 V. Zener current Iz = 5 mA. Power dissipation Pt = 500 mW. |
XR73-11T | Shanghai Sunrise | Planar zener diode. Zener voltage Vz = 10.82-11.38 V. Zener current Iz = 10 mA. Power dissipation Pt = 500 mW. |
5KP7.0C | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 7.78 V, Vbrmax = 9.51 V. Test current It = 50 mA. |
ES2C | Shanghai Sunrise | Surface mount super fast switching rectifier. Max repetitive peak reverse voltage 150 V. Max average forward rectified current 2.0 A. |
P6KE350CA | Shanghai Sunrise | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 332 V, Vbr(max) = 368 V. Test current It = 1.0 mA. |