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50S116T-6 similaires

  • 50S116T-5
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
  • 50S116T-6
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
  • 50S116T-7
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA

50S116T-6 Datasheet et spécifications

Fabricant : Ceramate 

Emballage : TSOP 

Pins : 50 

Température : Min 0 °C | Max 70 °C

Taille : 1126 KB

Application : High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA 

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