| Partie n | Fabricant | Application |
|---|
| MMBZ5254B | Chenyi Electronics | Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 27.0 V. Test current 4.6 mA. |
| MMBZ5234B | Chenyi Electronics | Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA. |
| BZX55/C180 | Chenyi Electronics | Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 180 V, Izt = 1 mA for Vzt . |
| 1N967 | Chenyi Electronics | 0.5W silicon planar zener diode. Zener voltage Vz = 18 V. Test current Izt = 7 mA. |
| SR1030 | Chenyi Electronics | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 10.0 A. |
| DB4 | Chenyi Electronics | Silicon bidirectional DIAC. Breakover voltage(typ) 40 V. Repetitive peak in-state current 2.0 A. |
| 1N4148 | Chenyi Electronics | Small signal switching diode. Reverse voltage 75 V. Average rectified current 150 mA. |
| GBPC15005 | Chenyi Electronics | Single phase silicon passivated bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 15 A. |
| SRF1080 | Chenyi Electronics | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 80 V. Max average forward rectified current 10.0 A. |
| 1N4745 | Chenyi Electronics | 1W silicon planar zener diode. Nominal zener voltage Vz = 16 V. Test current Izt = 15.5 mA. |
| 1N962 | Chenyi Electronics | 0.5W silicon planar zener diode. Zener voltage Vz = 11 V. Test current Izt = 11.5 mA. |
| 1N5226 | Chenyi Electronics | 0.5W silicon planar zener diode. Nominal zener voltage Vz = 3.3 V. Test current Izt = 20 mA. |
| HER105G | Chenyi Electronics | Glass passivated high efficiency rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 1.0 A. |
| BZX55/C110 | Chenyi Electronics | Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 110 V, Izt = 1 mA for Vzt . |
| KBPC2510 | Chenyi Electronics | Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 25 A. |
| BZX97/C15 | Chenyi Electronics | Silicon planar zener diodes. 0.5 W. Zener voltage range Vznom = 15 V, Izt = 5 mA for Vzt. |
| SRF1030 | Chenyi Electronics | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 30 V. Max average forward rectified current 10.0 A. |
| FR307 | Chenyi Electronics | Fast recovery rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 3.0 A. |
| SRF1620 | Chenyi Electronics | Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 16.0 A. |
| 1N5391 | Chenyi Electronics | General purpose plastic rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.5 A. |
| ZMM2.4 | Chenyi Electronics | 0.5W silicon planar zener diode. Zener voltage Vznom = 2.4 V. Izt = 5 mA. |
| MMBZ5240B | Chenyi Electronics | Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA. |
| 1N4740 | Chenyi Electronics | 1W silicon planar zener diode. Nominal zener voltage Vz = 10 V. Test current Izt = 25 mA. |
| HER152 | Chenyi Electronics | High efficiency rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 1.5 A. |
| RB155 | Chenyi Electronics | Single phase glass passivated bridge rectifier. Max recurrent peak reverse voltage Vrrm = 600 V. Max average forward rectified current If(av) = 1.5 A |
| SRF10A0A | Chenyi Electronics | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. |
| GBL08 | Chenyi Electronics | Single phase glass passivated bridge rectifier. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 4.0 A. |
| KBP08 | Chenyi Electronics | Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 2.0 A. |
| 1N5233 | Chenyi Electronics | 0.5W silicon planar zener diode. Nominal zener voltage Vz = 6.0 V. Test current Izt = 20 mA. |
| 1N4736 | Chenyi Electronics | 1W silicon planar zener diode. Nominal zener voltage Vz = 6.8 V. Test current Izt = 37 mA. |
