DB4 spec: Silicon bidirectional DIAC. Breakover voltage(typ) 40 V. Repetitive peak in-state current 2.0 A.

DB4 similaires

DB4
- Silicon bidirectional DIAC. Breakover voltage(typ) 40 V. Repetitive peak in-state current 2.0 A.

DB4 Datasheet et spécifications

Emballage : DO-35

Pins : 2

Température : Min -40 °C | Max 110 °C

Taille : 118 KB

Application : Silicon bidirectional DIAC. Breakover voltage(typ) 40 V. Repetitive peak in-state current 2.0 A.