Chemin:OKDatasheet > Fiche de Semi-conducteurs > Cree Datasheet > W6NXD3J-0000
W6NXD3J-0000 spec: Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition