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BSS123W similaires

  • BSS123W
    • 100V; 170mA N-channel enchancement mode field effect transistor
  • BSS138-7
    • 50V; 200mA N-channel enchancement mode field effect transistor
  • BSS138DW
    • 50V; 200mA dual N-channel enchancement mode field effect transistor
  • BSS138W
    • 50V; 200mA N-channel enchancement mode field effect transistor

BSS123W Datasheet et spécifications

Fabricant : Diodes 

Emballage : SOT-323 

Pins : 3 

Température : Min -55 °C | Max 150 °C

Taille : 73 KB

Application : 100V; 170mA N-channel enchancement mode field effect transistor 

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