EC-10N20 spec: N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.

EC-10N20 similaires

EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10P20
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.

EC-10N20 Datasheet et spécifications

Fabricant : EXICON

Emballage : TO3P

Pins : 3

Température : Min -55 °C | Max 150 °C

Taille : 249 KB

Application : N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.