PD45128163G5-A80L-9JF spec: 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit

PD45128163G5-A80L-9JF similaires

PD45128163G5-A10I-9JF
- 16M; 100MHz 64-bit synchronous dynamic RAM module
PD45128163G5-A10LI-9JF
- 16M; 100MHz 64-bit synchronous dynamic RAM module
PD45128163G5-A10T-9JF
- 128M; 100MHz synchronous DRAM 4-bank, LVTTL
PD45128163G5-A75I-9JF
- 16M; 133MHz 64-bit synchronous dynamic RAM module
PD45128163G5-A75L-9JF
- 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit
PD45128163G5-A75LI-9JF
- 16M; 133MHz 64-bit synchronous dynamic RAM module
PD45128163G5-A75LT-9JF
- 128M; 133MHz synchronous DRAM 4-bank, LVTTL
PD45128163G5-A75SU-9JF
- 128M; 133MHz synchronous dynamic RAM module

PD45128163G5-A80L-9JF Datasheet et spécifications

Fabricant : Elpida

Emballage : TSOP

Pins : 54

Température : Min 0 °C | Max 0 °C

Taille : 750 KB

Application : 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit