UPD45128163G5-A10T-9JF spec: 128M-bit (2M x 16-bit x 4-bank), synchronous DRAM LVTTL, 100 MHz

UPD45128163G5-A10T-9JF similaires

UPD45128841G5-A80L-9JF
- 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 8ns, 3.3V, low power
UPD45128441G5-A80L-9JF
- 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 8ns, 3.3V, low power
UPD45128441G5-A75L-9JF
- 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 7.5ns, 3.3V, low power
UPD45128841G5-A75-9JF
- 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 7.5ns, 3.3V
UPD45128441G5-A75-9JF
- 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 7.5ns, 3.3V
UPD45128163G5-A80-9JF
- 128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 8ns, 3.3V
UPD45128841G5-A80LT-9JF
- 128M-bit (4M x 8-bit x 4-bank), synchronous DRAM LVTTL, 125 MHz
UPD45128441G5-A80-9J
- 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 8ns, 3.3V

UPD45128163G5-A10T-9JF Datasheet et spécifications

Fabricant : Elpida

Emballage : TSOP II

Pins : 54

Température : Min -20 °C | Max 85 °C

Taille : 784 KB

Application : 128M-bit (2M x 16-bit x 4-bank), synchronous DRAM LVTTL, 100 MHz