Chemin:OKDatasheet > Fiche de Semi-conducteurs > HYNIX Datasheet > HY51VS17403HGJ-6
HY51VS17403HGJ-6 spec: 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
HY51VS17403HGJ-6 similaires
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51VS17403HGJ-6 Datasheet et spécifications
Fabricant : HYNIX
Emballage : SOJ
Pins : 24
Température : Min 0 °C | Max 70 °C
Taille : 105 KB
Application : 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
HY51VS17403HGJ-6 PDF Download