P6606-110 similaires

  • P6606-110
    • Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
  • P6606-210
    • Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
  • P6606-310
    • Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
  • P6606-320
    • Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements

P6606-110 Datasheet et spécifications

Fabricant : Hamamatsu 

Emballage : TO-8 

Pins : 6 

Température : Min -40 °C | Max 60 °C

Taille : 170 KB

Application : Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements 

P6606-110 PDF Download