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HI3669 spec: Emitter to base voltage5V 2A NPN epitaxial planar transistor for using in power amplifier applications
HI3669 similaires
- HI3669
- Emitter to base voltage5V 2A NPN epitaxial planar transistor for using in power amplifier applications
HI3669 Datasheet et spécifications
Fabricant : Hi Sincerity
Emballage : TO-251
Pins : 3
Température : Min 0 °C | Max 0 °C
Taille : 35 KB
Application : Emitter to base voltage5V 2A NPN epitaxial planar transistor for using in power amplifier applications
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