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HLB123I spec: Emitter to base voltage8V; NPN epitaxial planar transistor
HLB123I similaires
- HLB120A
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB121I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB123I
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB123T
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
- HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies
HLB123I Datasheet et spécifications
Fabricant : Hi Sincerity
Emballage : TO-251
Pins : 3
Température : Min 0 °C | Max 0 °C
Taille : 39 KB
Application : Emitter to base voltage8V; NPN epitaxial planar transistor
HLB123I PDF Download