| Partie n | Fabricant | Application |
|---|
| IRFB11N50A | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A |
| SD203N25S15PBC | IR | Fast recovery diode |
| SD203R10S15PC | IR | Fast recovery diode |
| IRG4PC50UD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A |
| SD103N12S20MSC | IR | Fast recovery diode |
| ST083S04PFK2L | IR | Inverter grade thyristor |
| IRFI640G | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 9.8 A |
| IRG4RC10K | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A |
| SD233N36S50MC | IR | Fast recovery diode |
| ST2600C24R2L | IR | Phase control thyristor |
| IRF340 | IR | HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 10A |
| ST700C22L0 | IR | Phase control thyristor |
| ST083S10PFK2 | IR | Inverter grade thyristor |
| SD203R16S15MBV | IR | Fast recovery diode |
| SD233R40S50PSC | IR | Fast recovery diode |
| JANTX2N6800 | IR | HEXFET power mosfet |
| IRFR9210 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.9A |
| IRFP064N | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 110A |
| 309URA80P4 | IR | Standard recovery diode |
| 307UA200P4 | IR | Standard recovery diode |
| IRFR4105 | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.045 Ohm, ID = 27A |
| SD150N16MSV | IR | Standard recovery diode |
| IRF5N3710 | IR | HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.028 Ohm, ID = 45A |
| SD153R08S10PBV | IR | Fast recovery diode |
| 16TTS12STPL | IR | Surface mountable phase control SCR |
| SD153N08S15PV | IR | Fast recovery diode |
| IRF9Z24NS | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A |
| 81RIA40M | IR | Phase control thyristor |
| IRFD9210 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -0.40 A |
| SD153R16S15PSV | IR | Fast recovery diode |
