| Partie n | Fabricant | Application |
|---|
| IRG4BC10SD-L | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A |
| 307URA120P3 | IR | Standard recovery diode |
| SD300N20MC | IR | Standard recovery diode |
| IRFU224 | IR | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 1.1 Ohm, ID = 3.8A |
| ST1900C48R3L | IR | Phase control thyristor |
| SD103N12S15PSC | IR | Fast recovery diode |
| 305UA80P4 | IR | Standard recovery diode |
| SD200N16PSV | IR | Standard recovery diode |
| SD200OC04L | IR | Standard recovery diode |
| ST180S18M0L | IR | Phase control thyristor |
| IRFI624G | IR | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 1.1 Ohm, ID = 3.4 A |
| SD150N25MBC | IR | Standard recovery diode |
| SD703C16S30L | IR | Fast recovery diode |
| IRGBC20K-S | IR | Insulated gate bipolar transistor |
| ST1900C46R0 | IR | Phase control thyristor |
| 301URA200P3 | IR | Standard recovery diode |
| ST083S04PFK1 | IR | Inverter grade thyristor |
| ST303S08MFN0 | IR | Inverter grade thyristor |
| SD300N25MSC | IR | Standard recovery diode |
| SD453N20S20PC | IR | Fast recovery diode |
| IRKDL45025S20 | IR | Standard diode |
| IRFP064V | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 5.5mOhm, ID = 130A |
| SD103N25S20MC | IR | Fast recovery diode |
| ST300C12C2 | IR | Phase control thyristor |
| ST330S14M1L | IR | Phase control thyristor |
| IRFR310 | IR | HEXFET power MOSFET. VDSS = 400V, RDS(on) = 3.6 Ohm, ID = 1.7A |
| SD203R04S15MC | IR | Fast recovery diode |
| ST2600C28R1 | IR | Phase control thyristor |
| ST300C16C0 | IR | Phase control thyristor |
| 302UR120AYPD | IR | Standard recovery diode |
