| Partie n | Fabricant | Application |
|---|
| IRF830A | IR | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
| ST280S04P0VL | IR | Phase control thyristor |
| ST330C12L3 | IR | Phase control thyristor |
| 47L160D | IR | Standard recovery diode |
| IRFBC40L | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A |
| 72UFR160AYPD | IR | Standard recovery diode |
| SD203R08S15MSC | IR | Fast recovery diode |
| IRFP32N50K | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.135 Ohm, ID = 32 A |
| ST300C16C1L | IR | Phase control thyristor |
| SD600N32PSC | IR | Standard recovery diode |
| SD203R10S15MC | IR | Fast recovery diode |
| SD253N08S20PSV | IR | Fast recovery diode |
| SD203R25S20MC | IR | Fast recovery diode |
| IRG4RC10S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A |
| 305U120 | IR | Standard recovery diode |
| IRFM260 | IR | HEXFET transistor |
| ST2100C36R0L | IR | Phase control thyristor |
| 305URA160P4 | IR | Standard recovery diode |
| SD553C30S50L | IR | Fast recovery diode |
| ST203S12MFJ2 | IR | Inverter grade thyristor |
| ST300C16L0 | IR | Phase control thyristor |
| SD600R16MTC | IR | Standard recovery diode |
| IRFR9214 | IR | HEXFET power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ohm, ID = -2.7A |
| IRGPC50F | IR | Insulated gate bipolar transistor |
| IRF7460 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 10 mOhm @ VGS = 10V, ID = 12A |
| ST330C16C3L | IR | Phase control thyristor |
| 301UR120P4 | IR | Standard recovery diode |
| ST330C12L1L | IR | Phase control thyristor |
| 305UA80P3 | IR | Standard recovery diode |
| IRLZ44N | IR | Power MOSFET for fast switching applications, 55V, 47A |
