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IR2130J ST183S04MFN2 301UA160P4 IR6224 SD203R12S15MSC ST083S10PFK1L 45LFR40 20ETS16 SD153N14S10PV 307UA200P2 ST733C08LHK0 ST2600C24R2 302UR160AYPD SD403C14S10C ST333C08LHK3 SD253N16S20PSV IRFP3415 IRHNA8160 ST173S10MFK1L SD500N30PSC SD603C16S15C ST700C20L2 303UR120P4 IRG4PSC71UD
Partie n | Fabricant | Application |
---|---|---|
ST180C08C2 | IR | Phase control thyristor |
IRG4RC10K | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A |
IR2130J | IR | 3-phase bridge driver |
ST183S04MFN2 | IR | Inverter grade thyristor |
301UA160P4 | IR | Standard recovery diode |
IR6224 | IR | Intelligent high side mosfet power switch |
SD203R12S15MSC | IR | Fast recovery diode |
ST083S10PFK1L | IR | Inverter grade thyristor |
45LFR40 | IR | Standard recovery diode |
20ETS16 | IR | Surface mountable input rectifier diode |
SD153N14S10PV | IR | Fast recovery diode |
307UA200P2 | IR | Standard recovery diode |
ST733C08LHK0 | IR | Inverter grade thyristor |
ST2600C24R2 | IR | Phase control thyristor |
302UR160AYPD | IR | Standard recovery diode |
SD403C14S10C | IR | Fast recovery diode |
ST333C08LHK3 | IR | Inverter grade thyristor |
SD253N16S20PSV | IR | Fast recovery diode |
IRFP3415 | IR | HEXFET power MOSFET. VDSS = 150 V, RDS(on) = 0.042 Ohm, ID = 43 A |
IRHNA8160 | IR | HEXFET transistor |
ST173S10MFK1L | IR | Inverter grade thyristor |
SD500N30PSC | IR | Standard recovery diode |
SD603C16S15C | IR | Fast recovery diode |
ST700C20L2 | IR | Phase control thyristor |
303UR120P4 | IR | Standard recovery diode |
IRG4PSC71UD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60A |
IRGP440UD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
ST1200C16K1L | IR | Phase control thyristor |
300UFR160AYPD | IR | Standard recovery diode |
IRG4BC15UD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A |