Chemin:okDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IR-23
C04L3 SD600R12PSC ST180C18C1L SD200R08MSC 305U80P5 SD500N36PC ST303S08MFN3 PVAZ172N IRLML2803TR ST300C16L1L ST333C08LHK0L 300HF40MB IRFSL41N15D 305URA80P4 IRG4BC30W-S SD453N20S30MTC ST230C12C1L ST280C04C2L IRGPC30MD2 ST223S08PFN2 SD600R32PTC 305U120P4 ST2100C30R3 SD200R12MBC SD25
Partie n | Fabricant | Application |
---|---|---|
SD203R12S20PSC | IR | Fast recovery diode |
ST780C04L3 | IR | Phase control thyristor |
SD600R12PSC | IR | Standard recovery diode |
ST180C18C1L | IR | Phase control thyristor |
SD200R08MSC | IR | Standard recovery diode |
305U80P5 | IR | Standard recovery diode |
SD500N36PC | IR | Standard recovery diode |
ST303S08MFN3 | IR | Inverter grade thyristor |
PVAZ172N | IR | HEXFET power mosfet photovoltaic relay |
IRLML2803TR | IR | N-channel power MOSFET, 30V, 1.2A |
ST300C16L1L | IR | Phase control thyristor |
ST333C08LHK0L | IR | Inverter grade thyristor |
300HF40MB | IR | Standard recovery diode |
IRFSL41N15D | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.045 Ohm, ID = 41A |
305URA80P4 | IR | Standard recovery diode |
IRG4BC30W-S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A |
SD453N20S30MTC | IR | Fast recovery diode |
ST230C12C1L | IR | Phase control thyristor |
ST280C04C2L | IR | Phase control thyristor |
IRGPC30MD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
ST223S08PFN2 | IR | Inverter grade thyristor |
SD600R32PTC | IR | Standard recovery diode |
305U120P4 | IR | Standard recovery diode |
ST2100C30R3 | IR | Phase control thyristor |
SD200R12MBC | IR | Standard recovery diode |
SD253N14S15MSV | IR | Fast recovery diode |
SD153R04S10PV | IR | Fast recovery diode |
IRFR224 | IR | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 1.1 Ohm, ID = 3.8A |
302UF120AYPD | IR | Standard recovery diode |
301UR160P5 | IR | Standard recovery diode |