Chemin:OKDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IRC830
IRC830 spec: HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm
IRC830 similaires
- IRC830
- HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm
IRC830 Datasheet et spécifications
Fabricant : IR
Emballage : TO-220
Pins : 5
Température : Min -55 °C | Max 150 °C
Taille : 244 KB
Application : HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm
IRC830 PDF Download