IRF1010N similaires

IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010EL
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IRF1010ES
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IRF1010N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1010NL
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1010NS
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IRF1010N Datasheet et spécifications

Fabricant : IR

Emballage :

Pins : 3

Température : Min -55 °C | Max 175 °C

Taille : 232 KB

Application : HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.