IRF360 similaires

  • IRF3205
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205L
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205S
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF3315
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF360 Datasheet et spécifications

Fabricant : IR 

Emballage : TO-3 

Pins : 3 

Température : Min -55 °C | Max 150 °C

Taille : 152 KB

Application : HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25A 

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