IRF430 spec: Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A

IRF430 similaires

IRF430
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A
IRF440
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
IRF440
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
IRF440
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
IRF450
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A
IRF460
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A
IRF460
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A
IRF460
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A

IRF430 Datasheet et spécifications

Fabricant : IR

Emballage : TO-3

Pins : 3

Température : Min -55 °C | Max 150 °C

Taille : 160 KB

Application : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A