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IRF5851 spec: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch)
IRF5851 similaires
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IRF5851 Datasheet et spécifications
Fabricant : IR
Emballage : TSOP
Pins : 6
Température : Min -55 °C | Max 150 °C
Taille : 189 KB
Application : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch)
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