IRF7807V similaires

  • IRF7103
    • N-channel power MOSFET for fast switching applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103QTR
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF720
    • N-channel HEXFET, 400V, 3.3A
  • IRF7204
    • P-channel MOSFET for fast switching applications, 20V, 5.3A
  • IRF721
    • N-channel HEXFET, 350V, 3.3A
  • IRF722
    • N-channel HEXFET, 400V, 2.8A

IRF7807V Datasheet et spécifications

Fabricant : IR 

Emballage : SO 

Pins : 8 

Température : Min -55 °C | Max 150 °C

Taille : 174 KB

Application : FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =17mOhm 

IRF7807V PDF Download