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IRF830AS spec: HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
IRF830AS similaires
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IRF830AS Datasheet et spécifications
Fabricant : IR
Emballage : DDPak
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 170 KB
Application : HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
IRF830AS PDF Download