IRF9520NS similaires

  • IRF9130
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
  • IRF9140
    • HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
  • IRF9140
    • HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
  • IRF9140
    • HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9520NS Datasheet et spécifications

Fabricant : IR 

Emballage : DDPak 

Pins : 3 

Température : Min -55 °C | Max 175 °C

Taille : 170 KB

Application : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8A 

IRF9520NS PDF Download