IRF9530 similaires

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    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
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IRF9530 Datasheet et spécifications

Fabricant : IR 

Emballage :  

Pins : 3 

Température : Min -55 °C | Max 150 °C

Taille : 493 KB

Application : P-channel MOSFET, 100V, 12A 

IRF9530 PDF Download