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IRFB260N spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
IRFB260N similaires
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- IRFB260N
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IRFB260N Datasheet et spécifications
Fabricant : IR
Emballage :
Pins : 3
Température : Min -55 °C | Max 175 °C
Taille : 98 KB
Application : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
IRFB260N PDF Download