IRFI1010N similaires

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IRFI1010N
- HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A
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IRFI1010N Datasheet et spécifications

Fabricant : IR

Emballage : TO-220 FULLPAK

Pins : 3

Température : Min -55 °C | Max 175 °C

Taille : 119 KB

Application : HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A