Chemin:OKDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IRFP23N50L
IRFP23N50L spec: HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.190 Ohm, ID = 23A, Trr = 170ns.
IRFP23N50L similaires
- IRFP044
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028 Ohm, ID = 57A
- IRFP048
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.018 Ohm, ID = 70A
- IRFP048N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.016 Ohm, ID = 64A
- IRFP054
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.014 Ohm, ID = 70A
- IRFP054V
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 9.0mOhm, ID = 93A
- IRFP054V
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 9.0mOhm, ID = 93A
- IRFP064
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
- IRFP064N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 110A
IRFP23N50L Datasheet et spécifications
Fabricant : IR
Emballage : TO-247AC
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 114 KB
Application : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.190 Ohm, ID = 23A, Trr = 170ns.
IRFP23N50L PDF Download