Chemin:OKDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IRG4PH40KD
IRG4PH40KD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A
Chemin:OKDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IRG4PH40KD
IRG4PH40KD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A
Fabricant : IR
Emballage : TO-247AC
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 238 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A