IRG4PH50KD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A

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IRG4PH50KD Datasheet et spécifications

Fabricant : IR

Emballage : TO-247AC

Pins : 3

Température : Min -55 °C | Max 150 °C

Taille : 246 KB

Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A